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| STB30N10 N - CHANNEL 100V - 0.06 - 30A - D2PAK POWER MOS TRANSISTOR TYPE STB30N10 V DSS 100 V R DS(on) < 0.07 ID 30 A s s s s s s s s TYPICAL RDS(on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID ID IDM (*) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 100 100 20 30 21 120 150 1 -65 to 175 175 Unit V V V A A A W W/o C o o C C (*) Pulse width limited by safe operating area September 1998 1/5 STB30N10 THERMAL DATA R thj-case R thj-amb R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 1 62.5 0.5 o o C/W C/W o C/W AVALANCHE CHARACTERISTICS Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) Max Value 30 240 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 100 10 10 100 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 100 o C Gate-body Leakage Current (V DS = 0) V GS = 20 V ON () Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance V DS = V GS V GS = 10 V Test Conditions I D = 250 A I D = 15 A 30 Min. 2 Typ. 3 0.06 Max. 4 0.07 Unit V A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V DYNAMIC Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 15 A V GS = 0 Min. 10 Typ. 20 2600 350 85 3600 500 110 Max. Unit S pF pF pF 2/5 STB30N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-on Current Slope Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 50 V R G = 47 V DD = 80 V R G = 47 I D = 30 A I D = 15 A V GS = 10 V I D = 30 A V GS = 10 V V GS = 10 V V DD = 80 V Min. Typ. 25 60 480 80 13 28 120 Max. 35 90 Unit ns ns A/s nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V R G = 47 I D = 30 A V GS = 10 V Min. Typ. 25 25 55 Max. 35 35 75 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A I SD = 30 A V DD = 30 V V GS = 0 di/dt = 100 A/s T j = 150 o C 175 1.05 12 Test Conditions Min. Typ. Max. 30 120 1.5 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/5 STB30N10 TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.3 2.49 0.7 1.25 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.4 0.6 1.36 9.35 10.28 5.28 15.85 1.4 1.75 MIN. 0.169 0.098 0.027 0.049 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.055 0.068 DIM. E C2 L2 A D L L3 B2 B G A1 C P011P6/C 4/5 STB30N10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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